JPH0533551B2 - - Google Patents
Info
- Publication number
- JPH0533551B2 JPH0533551B2 JP60007254A JP725485A JPH0533551B2 JP H0533551 B2 JPH0533551 B2 JP H0533551B2 JP 60007254 A JP60007254 A JP 60007254A JP 725485 A JP725485 A JP 725485A JP H0533551 B2 JPH0533551 B2 JP H0533551B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- growth
- substrate
- layer made
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 82
- 238000005253 cladding Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 230000031700 light absorption Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000002161 passivation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XXAXVMUWHZHZMJ-UHFFFAOYSA-L 4,5-dihydroxybenzene-1,3-disulfonate Chemical compound OC1=CC(S([O-])(=O)=O)=CC(S([O-])(=O)=O)=C1O XXAXVMUWHZHZMJ-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725485A JPS6224680A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP725485A JPS6224680A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6224680A JPS6224680A (ja) | 1987-02-02 |
| JPH0533551B2 true JPH0533551B2 (en]) | 1993-05-19 |
Family
ID=11660892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP725485A Granted JPS6224680A (ja) | 1985-01-17 | 1985-01-17 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6224680A (en]) |
-
1985
- 1985-01-17 JP JP725485A patent/JPS6224680A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPL.PHYS.LETT=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6224680A (ja) | 1987-02-02 |
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